Faraday Effect in Rubidium Atomic Layers Thinner than 100 nm

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TitreFaraday Effect in Rubidium Atomic Layers Thinner than 100 nm
Type de publicationJournal Article
Year of Publication2019
AuteursSargsyan A., Amiryan A., Sarkisyan D.
JournalJOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
Volume128
Pagination341-346
Date PublishedMAR
Type of ArticleArticle
ISSN1063-7761
Résumé

The interaction of rubidium atoms with sapphire cell windows at an interwindow distance L = 40-100 nm is studied. For studies, we used the Faraday rotation (FR) effect (rotation of the plane of radiation polarization in a magnetic field) in a thin rubidium atom vapor column for D-1,D- 2 lines. When L decreases from 100 to 40 nm, a red shift of the FR signal frequency is detected: it increases from 10 to 250 MHz, and the broadening of the low-frequency wing increases to 1 GHz. The atomic transition F-g = 3 F-e = 2 for the D-1 line of Rb-85 is shown to be convenient for such investigations, since it can be spectrally separated from other strongly broadened atomic transitions. Coefficients C-3, which characterize the atom-surface interaction for the D-1 and D-2 lines of Rb, are determined. An additional red frequency shift takes place at a nanocell thickness L < 100 nm when the Rb atom density increases, and this shift is absent at large L. A practical application of an FR signal for measuring strong magnetic fields of several kilogausses is described.

DOI10.1134/S1063776119020249