Size and Surface Chemistry Tuning of Silicon Carbide Nanoparticles

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TitreSize and Surface Chemistry Tuning of Silicon Carbide Nanoparticles
Type de publicationJournal Article
Year of Publication2017
AuteursAlekseev S, Shamatulskaya E, Volvach M, Gryn S, Korytko D, Bezverkhyy I, Iablokov V, Lysenko V
JournalLANGMUIR
Volume33
Pagination13561-13571
Date PublishedNOV 28
Type of ArticleArticle
ISSN0743-7463
Résumé

Chemical transformations on the surface of commercially available 3C-SiC nanoparticles were studied by means of FTIR, XPS, and temperature-programmed desorption mass spectrometry methods. Thermal oxidation of SiC NPs resulted in the formation of a hydroxylated SiO2 surface layer with C3Si-H and CHx groups over the SiO2/SiC interface. Controllable oxidation followed by oxide dissolution in HF or KOH solution allowed the SiC NPs size tuning from 17 to 9 nm. Oxide-free SiC surfaces, terminated by hydroxyls and C3Si-H groups, can be efficiently functionalized by alkenes under thermal or photochemical initiation. Treatment of SiC NPs by HF/HNO3 mixture produces a carbon-enriched surface layer with carboxylic acid groups susceptible to amide chemistry functionalization. The hydroxylated, carboxylated, and aminated SiC NPs form stable aqueous sols.

DOI10.1021/acs.langmuir.7b02784