Atomic Scale Modeling of Two-Dimensional Molecular Self-Assembly on a Passivated Si Surface

Affiliation auteurs!!!! Error affiliation !!!!
TitreAtomic Scale Modeling of Two-Dimensional Molecular Self-Assembly on a Passivated Si Surface
Type de publicationJournal Article
Year of Publication2014
AuteursCopie G., Makoudi Y., Krzeminski C., Cherioux F., Palmino F., Lamare S., Grandidier B., Cleri F.
JournalJOURNAL OF PHYSICAL CHEMISTRY C
Volume118
Pagination12817-12825
Date PublishedJUN 19
Type of ArticleArticle
ISSN1932-7447
Résumé

The self-assembly of two-dimensional (2D) molecular structures on a solid surface relies on the subtle balance between noncovalent intermolecular and molecule-surface forces. The energetics of 2D molecular lattices forming different patterns on a passivated semiconductor surface are here investigated by a combination of atomistic simulation methods. Density-functional theory provides structure and charges of the molecules, while metadynamics with empirical forces provides a best guess for the lowest-energy adsorption sites of single molecules and dimers. Subsequently, molecular dynamics simulations of extended molecular assemblies with empirical forces yield the most favorable lattice structures at finite temperature and pressure. The theoretical results are in good agreement with scanning tunneling microscopy observations of self-assembled molecular monolayers on a B-doped Si(111) surface, thus allowing to rationalize the competition of long-range dispersion forces between the molecules and the surface. Such a result demonstrates the interest of this predictive approach for further progress in supramolecular chemistry on semiconductor surfaces.

DOI10.1021/jp501955v