Bending of Semiconducting Cantilevers Under Photothermal Excitation

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TitreBending of Semiconducting Cantilevers Under Photothermal Excitation
Type de publicationJournal Article
Year of Publication2014
AuteursSong Y, Todorovic DM, Cretin B, Vairac P, Xu J, Bai J
JournalINTERNATIONAL JOURNAL OF THERMOPHYSICS
Volume35
Pagination305-319
Date PublishedFEB
Type of ArticleArticle
ISSN0195-928X
Mots-clésPhotothermal, Semiconducting cantilevers, Vibration
Résumé

In this study, the elastic vibrations of semiconducting cantilevers, which were excited with a frequency-modulated uniform laser beam, were studied theoretically and experimentally. The three-dimensional distributions for the carrier density and temperature were obtained analytically using the Green function method. The elastic bending of a cantilever was given by the theory of a thin rectangular plate. Using an optical interferometric setup, the experimental photothermal signals were investigated near the first resonant frequency and the results showed that the theoretical calculation results were in good agreement with that of the experimental measurement.

DOI10.1007/s10765-014-1572-x