Detection of high intensity THz radiation by field effect transistors
| Affiliation auteurs | !!!! Error affiliation !!!! |
| Titre | Detection of high intensity THz radiation by field effect transistors |
| Type de publication | Conference Paper |
| Year of Publication | 2014 |
| Auteurs | But DB, Sakhno MV, Oden J, Notake T., Dyakonova NV, Coquillat D, Teppe F, Minamide H, Otani C, Knap W |
| Conference Name | 26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) |
| Publisher | IEEE |
| Conference Location | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| ISBN Number | 978-1-4799-5729-3 |
| Résumé | Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm(2) was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm(2) up to kW/cm(2). |