GDC Buffer Layer Synthesized by Reactive Magnetron Sputtering: Effect of Total Pressure and Thickness on SOFC Performances
Affiliation auteurs | !!!! Error affiliation !!!! |
Titre | GDC Buffer Layer Synthesized by Reactive Magnetron Sputtering: Effect of Total Pressure and Thickness on SOFC Performances |
Type de publication | Journal Article |
Year of Publication | 2020 |
Auteurs | Bouleau L, Coton N, Coquoz P, Ihringer R, Billard A, Briois P |
Journal | CRYSTALS |
Volume | 10 |
Pagination | 759 |
Date Published | SEP |
Type of Article | Article |
ISSN | 2073-4352 |
Mots-clés | Buffer layer, GDC, Physical vapor deposition (PVD), Thin Film |
Résumé | Gadolinia-doped ceria (GDC) buffer layers were synthesized by reactive magnetron sputtering under different total pressures and different thickness. All as-deposited and after an annealing treatment during two hours under air at 1000 degrees C coating presents a face centered cubic (f.c.c) structure of ceria with dense and adhesive morphology. The cell synthesized under 0.1 Pa and 0.57 mu m present the best performances. (open-circuit voltage (OCV): 1.133 eV and power density: 1650 mW center dot cm(-2)@ 800 mA center dot cm(-2)at 790 degrees C). |
DOI | 10.3390/cryst10090759 |