GDC Buffer Layer Synthesized by Reactive Magnetron Sputtering: Effect of Total Pressure and Thickness on SOFC Performances

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TitreGDC Buffer Layer Synthesized by Reactive Magnetron Sputtering: Effect of Total Pressure and Thickness on SOFC Performances
Type de publicationJournal Article
Year of Publication2020
AuteursBouleau L, Coton N, Coquoz P, Ihringer R, Billard A, Briois P
JournalCRYSTALS
Volume10
Pagination759
Date PublishedSEP
Type of ArticleArticle
ISSN2073-4352
Mots-clésBuffer layer, GDC, Physical vapor deposition (PVD), Thin Film
Résumé

Gadolinia-doped ceria (GDC) buffer layers were synthesized by reactive magnetron sputtering under different total pressures and different thickness. All as-deposited and after an annealing treatment during two hours under air at 1000 degrees C coating presents a face centered cubic (f.c.c) structure of ceria with dense and adhesive morphology. The cell synthesized under 0.1 Pa and 0.57 mu m present the best performances. (open-circuit voltage (OCV): 1.133 eV and power density: 1650 mW center dot cm(-2)@ 800 mA center dot cm(-2)at 790 degrees C).

DOI10.3390/cryst10090759