Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire
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Titre | Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire |
Type de publication | Journal Article |
Year of Publication | 2015 |
Auteurs | Bartasyte A., Plausinaitiene V., Abrutis A., Stanionyte S., Margueron S., Kubilius V., Boulet P., Huband S., Thomas P.A |
Journal | MATERIALS CHEMISTRY AND PHYSICS |
Volume | 149 |
Pagination | 622-631 |
Date Published | JAN 15 |
Type of Article | Article |
ISSN | 0254-0584 |
Mots-clés | Chemical vapour deposition (CVD), Deformation, Domain structure, Raman spectroscopy and scattering, Thermal expansion, Thin films |
Résumé | LiNbO3 films of high epitaxial quality and with thicknesses of 120-500 nm were deposited at 650 degrees C on C-sapphire by atmospheric pressure metal-organic chemical vapour deposition. Li nonstoichiometry, residual stresses, twinning, and thermal expansion of the films as a function of the film thickness were investigated by means of Raman spectroscopy and X-ray diffraction. The relaxation of residual stresses, Li2O loss, inelastic deformation and elastic hysteresis during cycles of heating up to 860 degrees C and cooling down to room temperature were studied, as well. The residual stresses and thermal expansion of films were highly thickness dependent. It was shown that the {01 (1) over bar2} twinning contributed to the stress relaxation in the thick LiNbO3 films. (C) 2014 Elsevier B.V. All rights reserved. |
DOI | 10.1016/j.matchemphys.2014.11.018 |