Thickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire

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TitreThickness dependent stresses and thermal expansion of epitaxial LiNbO3 thin films on C-sapphire
Type de publicationJournal Article
Year of Publication2015
AuteursBartasyte A., Plausinaitiene V., Abrutis A., Stanionyte S., Margueron S., Kubilius V., Boulet P., Huband S., Thomas P.A
JournalMATERIALS CHEMISTRY AND PHYSICS
Volume149
Pagination622-631
Date PublishedJAN 15
Type of ArticleArticle
ISSN0254-0584
Mots-clésChemical vapour deposition (CVD), Deformation, Domain structure, Raman spectroscopy and scattering, Thermal expansion, Thin films
Résumé

LiNbO3 films of high epitaxial quality and with thicknesses of 120-500 nm were deposited at 650 degrees C on C-sapphire by atmospheric pressure metal-organic chemical vapour deposition. Li nonstoichiometry, residual stresses, twinning, and thermal expansion of the films as a function of the film thickness were investigated by means of Raman spectroscopy and X-ray diffraction. The relaxation of residual stresses, Li2O loss, inelastic deformation and elastic hysteresis during cycles of heating up to 860 degrees C and cooling down to room temperature were studied, as well. The residual stresses and thermal expansion of films were highly thickness dependent. It was shown that the {01 (1) over bar2} twinning contributed to the stress relaxation in the thick LiNbO3 films. (C) 2014 Elsevier B.V. All rights reserved.

DOI10.1016/j.matchemphys.2014.11.018