Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric
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Titre | Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric |
Type de publication | Journal Article |
Year of Publication | 2016 |
Auteurs | Kumar A, Tyagi P, Dagar J, Srivastava R |
Journal | CARBON |
Volume | 99 |
Pagination | 579-584 |
Date Published | APR |
Type of Article | Article |
ISSN | 0008-6223 |
Résumé | We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm(2)/V at V-D = -5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexible FEDs with only 5% and 12% variation in mobility for 300 and 750 bending are obtained. (C) 2015 Elsevier Ltd. All rights reserved. |
DOI | 10.1016/j.carbon.2015.12.073 |