ICPECVD-Dielectric Thin-Films CMOS-Compatible: Trends in Eco-Friendly Deposition

Depositions of the dielectric thin-films at low temperatures without greenhouse gas, nitrous oxide (N2O) is one of the most critical challenges in modern technologies for microelectronics, optoelectronics, and nanoelectronics. The present study demonstrates that thin dielectric layers deposit by inductively-coupled plasma-enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures (< 300 degrees C) can be successfully optimized and has the potential to reduce the environmental impact significantly. A particular focus is made on the improvement of the optical properties that are strongly correlated to the physicochemical bonds film properties. Typical deposition rates range from 10 to 20 nm/min, depending mainly on power, pressure, and gas flows. This study opens up large scale applications that require lower hydrogen content and a stable process. The presented results emphasize green manufacturing technologies and can be valuable for a wide range of applications using a complementary metal-oxide-semiconductor (CMOS)-compatible technology.