(Ga,In)P nanowires grown without intentional catalyst
| Affiliation auteurs | !!!! Error affiliation !!!! |
| Titre | (Ga,In)P nanowires grown without intentional catalyst |
| Type de publication | Journal Article |
| Year of Publication | 2015 |
| Auteurs | Cerqueira CF, Viana BC, da Luz-Lima C, Perea-Lopez N, Terrones M, Falcao EHL, Gomes ASL, Chassagnon R, Pinto AL, Sampaio LC, Sacilotti M |
| Journal | JOURNAL OF CRYSTAL GROWTH |
| Volume | 431 |
| Pagination | 72-78 |
| Date Published | DEC 1 |
| Type of Article | Article |
| ISSN | 0022-0248 |
| Mots-clés | Growth from vapor, Metalorganic chemical vapor deposition, Nanomaterials, Nanostructures, Semiconducting gallium indium phosphide |
| Résumé | We have grown (Ga,ln)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H5)(3)Ga), used as Ga source, is transported by the N-2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga(1-y)ln(y)P interfaces (x not equal y) is proposed to explain this efficient light emission mechanism. (C) 2015 Elsevier B.V. All rights reserved. |
| DOI | 10.1016/j.jcrysgro.2015.08.009 |