Characterization of Single-Port SAW Resonators at 3.7 GHz Based on Epitaxial LiNbO3 Layers
| Affiliation auteurs | !!!! Error affiliation !!!! |
| Titre | Characterization of Single-Port SAW Resonators at 3.7 GHz Based on Epitaxial LiNbO3 Layers |
| Type de publication | Conference Paper |
| Year of Publication | 2017 |
| Auteurs | Clairet A, Oliveri S, Almirall A, Baron T, Daniau W, Bartasyte A |
| Conference Name | 2017 JOINT CONFERENCE OF THE EUROPEAN FREQUENCY AND TIME FORUM AND IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (EFTF/IFC) |
| Publisher | IEEE |
| Conference Location | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| ISBN Number | 978-1-5386-2916-1 |
| Mots-clés | high frequency, LiNbO3, SAW, Thin films |
| Résumé | The performance of single-port surface acoustic wave resonators based on 150 nm thick Z-axis oriented LiNbO3 films on C-sapphire was studied by means of simulations. The resonance frequencies close to 3.7 GHz were targeted. The dependence of wave velocity and electromechanical coupling on the propagation direction was determined. Effects of a presence of 60 degrees growth domains in films, or changes in Li composition in LiNbO3 layers and thicknesses of piezoelectric film and electrodes on the SAW properties was evaluated theoretically, as well. |