Characterization of CMOS metal based dielectric loaded surface plasmon waveguides at telecom wavelengths

Dielectric loaded surface plasmon waveguides (DLSPPWs) comprised of polymer ridges deposited on top of CMOS compatible metal thin films are investigated at telecom wavelengths. We perform a direct comparison of the properties of copper (Cu), aluminum (Al), titanium nitride (TiN) and gold (Au) based waveguides by implementing the same plasmonic waveguiding configuration for each metal. The DLSPPWs are characterized by leakage radiation microscopy and a fiber-to-fiber configuration mimicking the cut-back method. We introduce the ohmic loss rate (OLR) to analyze quantitatively the properties of the CMOS metal based DLSPPWs relative to the corresponding Au based waveguides. We show that the Cu, Al and TiN based waveguides feature extra ohmic loss compared to Au of 0.027 dB/mu m, 0.18 dB/mu m and 0.52 dB/mu m at 1550nm respectively. The dielectric function of each metal extracted from ellipsometric spectroscopic measurements is used to model the properties of the DLSPPWs. We find a fairly good agreement between experimental and modeled DLSPPWs properties except for Al featuring a large surface roughness. Finally, we conclude that TiN based waveguides sustaining intermediate effective index (in the range 1.05-1.25) plasmon modes propagate over very short distances restricting the the use of those modes in practical situations. (C) 2017 Optical Society of America