Influence of the Bias Substrate Power on the GDC Buffer Layer
| Affiliation auteurs | !!!! Error affiliation !!!! |
| Titre | Influence of the Bias Substrate Power on the GDC Buffer Layer |
| Type de publication | Conference Paper |
| Year of Publication | 2017 |
| Auteurs | Breaz E., Aubry E., Billard A., Coton N., Coquoz P., Pappas A., Diethelm S., Ihringer R., Briois P. |
| Editor | Singhal SC, Kawada T |
| Conference Name | SOLID OXIDE FUEL CELLS 15 (SOFC-XV) |
| Publisher | Electrochem Soc Inc; SOFC Soc Japan; Electrochem Soc, High Temp Mat |
| Conference Location | 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA |
| ISBN Number | 978-1-60768-815-0 |
| Résumé | Gadolinia Doped Ceria (GDC) buffer layers were synthesized by reactive magnetron sputtering under different bias powers applied to the substrate holder. All as-deposited coating present a face centered cubic (f.c.c) structure of ceria with dense and adhesive morphology. Only the film deposited under 80 W bias power applied to the substrate does not exhibit cracks after an annealing treatment during 2 h under air at 1000 degrees C. The performance of the cell is 670 mW.cm(-2) @ 800 mA.cm(-2) at 790 degrees C and no degradation was observed after 150 hours. |
| DOI | 10.1149/07801.0807ecst |