Oxide Growth Mechanism on Mg AZ91 Alloy by Anodizing: Combination of Electrochemical and Ellipsometric In-Situ Measurements

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TitreOxide Growth Mechanism on Mg AZ91 Alloy by Anodizing: Combination of Electrochemical and Ellipsometric In-Situ Measurements
Type de publicationJournal Article
Year of Publication2017
AuteursZimmer A, Veys-Renaux D, Broch L, Stein N, Rocca E
JournalJOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume164
PaginationC1059-C1066
Type of ArticleArticle
ISSN0013-4651
Résumé

The sparking initiation during the anodizing of metals in passivating electrolytic media is highly dependent on the physico-chemical properties of the evolving dielectric interface. The present paper focuses on magnesium alloy AZ91 and describes its anodizing in KOH 3 M over the potential range 0 to 40 V by combining in situ ellipsometric and electrochemical methods. In a first step, a thin and compact MgO anodic film is formed by ionic migration with a rate of 0.4 nm V-1. At 4 V to 5 V, the growth stresses lead to a sharp cracking of this MgO layer and the precipitation of a porous external Mg(OH)(2) layer. Under this overlayer acting as a membrane, a defective MgO film grows with a higher growth rate (1.1 nm V-1), inducing a new passivation state. This inner MgO layer is characterized by a relatively high dielectric constant and a large thickness (100 nm at 40 V) and is probably responsible for the low dielectric breakdown voltage observed during the anodizing process of magnesium alloy. (c) 2017 The Electrochemical Society.

DOI10.1149/2.1421714jes